View MRF327_358149.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF327/D
NPN Silicon RF Power Transistor
. . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. * Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band Minimum Gain = 7.3 dB @ 400 MHz * Built-In Matching Network for Broadband Operation Using Double Match Technique * 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR * Gold Metallization System for High Reliability Applications * Characterized for 100 to 500 MHz MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Collector Current -- Peak Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 33 60 4.0 9.0 12 250 1.43 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C
MRF327
80 W, 100 to 500 MHz CONTROLLED "Q" BROADBAND RF POWER TRANSISTOR NPN SILICON
CASE 316-01, STYLE 1
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.7 Unit C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 80 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 80 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 8.0 mAdc, IC = 0) Collector-Base Breakdown Voltage (IC = 80 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO V(BR)CBO ICBO 33 60 4.0 60 -- -- -- -- -- -- -- -- -- -- 5.0 Vdc Vdc Vdc Vdc mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc) hFE 20 -- 80 --
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob -- 95 125 pF
NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
REV 1
(c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1997
MRF327 1
ELECTRICAL CHARACTERISTICS - continued (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
FUNCTIONAL TESTS (Figure 1)
Common-Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 80 W, f = 400 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 80 W, f = 400 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 80 W, f = 400 MHz, VSWR = 30:1 All Phase Angles) GPE No Degradation in Output Power 7.3 50 9.0 60 -- -- dB %
R2 L3 L2 C12 C13 + + - C14 C15 - VCC 28 Vdc
L4 L5 R1 C11 C10 L1 RF INPUT Z1 C5 C1 C2 C3 C4 C6 C7 C8 C9 DUT Z2 Z3 RF OUTPUT
C1, C2, C7, C8, C9 -- 1.0 - 20 pF Piston Trimmer (Johanson JMC 5501) C3, C4 -- 36 pF ATC 100 mil Chip Capacitor C5, C6 -- 43 pF ATC 100 mil Chip Capacitor C10 -- 100 pF UNELCO C11, C15 -- 0.1 F Erie Redcap C12, C13 -- 680 pF Feedthru C14 -- 1.0 F 50 V Tantalum L1 -- 4 Turns #22 AWG Enameled, 3/16 ID Closewound with Ferroxcube L1 -- Bead (#56-590-65/4B) on Ground End of Coil L2 -- Ferroxcube VK200-19/4B Ferrite Choke L3 -- 7 Turns #18 AWG, 11/16 Long, Wound on a 100 k 2.0 Watt Resistor
L4 -- 6 Turns #20 AWG Enameled, 3/16 ID Closewound L5 -- 4 Turns #22 AWG Enameled, 1/8 ID Closewound Z1 -- Microstrip 0.2 W x 1.5 L Z2 -- Microstrip 0.17 W x 1.16 L Z3 -- Microstrip 0.17 W x 0.63 L R1, R2 -- 10 2.0 Watt Board -- Glass Teflon r = 2.56, t = 0.062 Input/Output Connectors Type N DUT Socket Lead Frame Etched from 80-mil-Thick Copper
Figure 1. 400 MHz Test Circuit
MRF327 2
MOTOROLA RF DEVICE DATA
15 Pout , OUTPUT POWER (WATTS) Pout = 80 W VCC = 28 V
120 Pin = 15 W
13 G PE , POWER GAIN (dB)
100
11
80
10 W 7.5 W
9
60
7
40 VCC = 28 V
5W
5
100
200
300 f, FREQUENCY (MHz)
400
500
20 100
200
300 f, FREQUENCY (MHz)
400
500
Figure 2. Power Gain versus Frequency
Figure 3. Output Power versus Frequency
100 Pin = 12 W Pout , OUTPUT POWER (WATTS) 80 Pout , OUTPUT POWER (WATTS) 9W
100 Pin = 15 W 80 10 W
60
6W
60 6W 40
40
20 f = 225 MHz 0 10 14 18 22 26 30
20 f = 400 MHz 0 10 14 18 22 26 30
VCC, SUPPLY VOLTAGE (VOLTS)
VCC, SUPPLY VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
120 f = 100 MHz Pout , OUTPUT POWER (WATTS) 100 225 MHz 400 MHz 500 MHz 80
60
40
VCC = 28 V
20
0
5
10 Pin, INPUT POWER (WATTS)
15
20
Figure 6. Output Power versus Input Power
MOTOROLA RF DEVICE DATA
MRF327 3
f = 100 MHz
-5 - 10
225 Zin 450 500 400 450
10 5
f = 100 MHz
225 ZOL*
400 500
5
10
Pout = 80 W, VCC = 28 V f MHz 100 225 400 450 500 Zin Ohms 0.33 + j0.26 0.56 + j1.64 1.3 + j3.29 1.58 + j2.53 0.82 + j2.9 ZOL* Ohms 2.23 - j3.3 2.15 - j0.66 1.27 + j1.0 1.27 + j1.54 1.3 + j2.35
15
20
25
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, ZOL* = voltage and frequency.
Figure 7. Series Equivalent Input-Output Impedance
MRF327 4
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
D R
3
F
4
K
NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495
1
Q
2
L B J E N H A U
STYLE 1: PIN 1. 2. 3. 4.
C
DIM A B C D E F H J K L N Q R U
EMITTER COLLECTOR EMITTER BASE
CASE 316-01 ISSUE D
MOTOROLA RF DEVICE DATA
MRF327 5
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MRF327 6
*MRF327/D*
MRF327/D MOTOROLA RF DEVICE DATA

▲Up To Search▲

Price & Availability of MRF327

	To Download MRF327 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .